unisonic technologies co., ltd UF540 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-715.a 27 a , 100v n-channel power mosfet ? description the utc UF540 is an n-channel enhancement mode power mosfet using utc?s advanced technology to provide the customers with a minimum on-state resistance and high switching speed. the utc UF540 is suitable for ac&d c motor controls and switching power supply, etc ? features * r ds(on) <85m ? @v gs = 10 v,i d =15a * high switching speed ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UF540l-ta3-t UF540g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
UF540 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-715.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage (note 2) v dss 100 v gate-source voltage v gss 20 v drain current continuous t c =25c i d 27 a t c =100c 17 a pulsed i dm 108 a power dissipation (t c =25c) p d 125 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those valu es beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. t j = +25~+150c ? thermal data parameter symbol ratings unit junction to case jc 1.0 c/w ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 100 v drain-source leakage current i dss v ds =100v, v gs =0v 250 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +500 na reverse v gs =-20v, v ds =0v -500 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =15a 0.085 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 1960 pf output capacitance c oss 250 pf reverse transfer capacitance c rss 40 pf switching parameters turn-on delay time t d ( on ) v dd =45v, i d =15a, v gs =10v, r gen =5.1 ? (fig.1, 2) (note 2) 11 ns rise time t r 35 ns turn-off delay time t d ( off ) 39 ns fall-time t f 35 ns total gate charge q g v dd =35v, i d =27a, v gs =10v, 71 nc gate to source charge q gs 14 nc gate to drain charge q gd 21 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =27a, v gs =0v 2.0 2.5 v body diode reverse recovery time t r r i s =4.0a, di s /dt=25a/s 300 ns maximum body-diode continuous current i s 27 a maximum body-diode pulsed current i sm 108 a notes: 1. pulse width limited by t j 2. switching time measurements per formed on lem tr-58 test equipment
UF540 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-715.a ? test circuits and waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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